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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet January 2000 File Number 4412.2
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49190.
Features
* 14A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss
Packaging
JEDEC TO-220AB
E COLLECTOR (FLANGE) C G
Ordering Information
PART NUMBER HGTD7N60B3S HGT1S7N60B3S HGTP7N60B3 PACKAGE TO-252AA TO-263AB TO-220AB BRAND G7N60B G7N60B3 G7N60B3
COLLECTOR (FLANGE) G E
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g., HGTD7N60B3S9A.
Symbol
C
JEDEC TO-252AA
COLLECTOR (FLANGE)
G
G E E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 14 7 56 20 30 35A at 600V 60 0.476 100 -55 to 150 260 2 12 UNITS V A A A V V W W/ oC mJ oC oC s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM. 2. VCE = 360V, TJ = 125oC, RG = 50.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.0 VCE = 480V VCE = 600V 42 35 TYP 28 1.8 2.1 5.1 MAX 100 2.0 2.1 2.4 6.0 100 UNITS V V A mA V V V nA A A
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
VGE(TH) IGES SSOA
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 50 VGE = 15V L = 100H
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0. 5BVCES VGE = 15V VGE = 20V
-
7.7 23 30 26 21 130 60 72 160 120
28 37 160 80 200 200
V nC nC ns ns ns ns J J J
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3)
td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IGBT and Diode Both at TJ = 25oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 50, L = 2mH Test Circuit (Figure 17)
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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3) Thermal Resistance Junction To Case NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the Turn-On loss of the IGBT only. EON2 is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode Both at TJ = 150oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG =50, L = 2mH Test Circuit (Figure 17) MIN TYP 24 22 230 120 80 310 350 MAX 295 175 350 500 2.1 UNITS ns ns ns ns J J J
oC/W
Typical Performance Curves
16 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE = 15V 14 12 10 8 6 4 2 0 25 50 75 100 125 150
50
TJ = 150oC, RG = 50, VGE = 15V
40
30
20
10
0
0
100
200
300
400
500
600
700
TC , CASE TEMPERATURE (oC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Typical Performance Curves
400 fMAX, OPERATING FREQUENCY (kHz)
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
TJ = 150oC, RG = 50, L = 2mH, VCE = 480V
TC 75oC 75oC 110oC 110oC
VGE 15V 10V 15V 10V
VCE = 360V, RG = 50, TJ = 125oC
100
14 ISC 10
80
60
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 2.1oC/W, SEE NOTES
6
tSC
40
1
2 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V)
20
1
2
3
4
5
6
8
10
15
ICE, COLLECTOR TO EMITTER CURRENT (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR TO EMITTER CURRENT (A)
30 25 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 10V
40
30
TC = 150oC TC = -55oC
TC = -55oC 15
TC = 150oC TC = 25oC
20
TC = 25oC
10 5 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10 PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 15V 0 1 2 3 4 5 6 7 8
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
1600 EOFF, TURN-OFF ENERGY LOSS (J) EON2, TURN-ON ENERGY LOSS (J) RG = 50, L = 2mH, VCE = 480V TJ = 150oC, VGE = 10V TJ = 150oC, VGE = 15V 800 TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V 400
1000
RG = 50, L = 2mH, VCE = 480V
800 TJ = 150oC, VGE = 10V AND 15V 600
1200
400
200 TJ = 25oC, VGE = 10V AND 15V 0 1 3 5 7 9 11 13 15
0
1
3
5
7
9
11
13
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
4
ISC, PEAK SHORT CIRCUIT CURRENT (A)
18
100
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Typical Performance Curves
60 tdI , TURN-ON DELAY TIME (ns) RG = 50, L = 2mH, VCE = 480V
Unless Otherwise Specified (Continued)
140 120
RG = 50, L = 2mH, VCE = 480V
50
trI, RISE TIME (ns)
TJ = 150oC, VGE = 10V TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V
100 80 60 40 20 0 TJ = 25oC and 150oC, VGE = 15V 1 3 5 7 9 11 13 15 TJ = 150oC, VGE = 10V TJ = 25oC, VGE = 10V
40
30
20
TJ = 150oC, VGE = 15V
10
1
3
5
7
9
11
13
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
250 td(OFF)I , TURN-OFF DELAY TIME (ns)
120 RG = 50, L = 2mH, VCE = 480V RG = 50, L = 2mH, VCE = 480V
TJ = 150oC, VGE = 15V TJ = 150oC, VGE = 10V 150 TJ = 25oC, VGE = 15V 100 TJ = 25oC, VGE = 10V 50 1
tfI , FALL TIME (ns)
200
100 TJ = 150oC, VGE = 10V and 15V 80
60 TJ = 25oC, VGE = 10V and 15V 9 11 13 15 40 1 3 5 7 9 11 13 15
3
5
7
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
15 VGE , GATE TO EMITTER VOLTAGE (V) DUTY CYCLE = < 0.5% PULSE DURATION = 250s VCE = 10V TC = 25oC
Ig(REF) = 0.758mA, RL = 86, TC = 25oC
32
12 VCE = 200V VCE = 600V
24
9
16 TC = 150oC 8 TC = -55oC 6 8 10 12 14
6
VCE = 400V
3
0
0
0
4
8
12
16
20
24
28
VGE , GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Typical Performance Curves
Unless Otherwise Specified (Continued)
1200 FREQUENCY = 1MHz 1000 C, CAPACITANCE (pF) CIES 800 600 400 COES 200 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
ZJC , NORMALIZED THERMAL RESPONSE
DUTY CYCLE - DESCENDING ORDER 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 10-4 10-3 PD SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 100 t2 101 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
L = 2mH RHRD660 VGE
90% 10% EON2 EOFF
RG = 50 +
VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I
-
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 7
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